ST公司的RHRPMPOL01是單相降壓單片開關穩壓器,集成了高精度內部基準電壓和用于同步轉換的功率MOSFET.器件采用SOI技術,對單粒子閂鎖效應有良好的性能.RHRPMPOL01能輸入電壓3.0V到12V轉換成 8V到0.85xVIN輸出電壓.設計用在空間應用的FPGA,DSP,MCU和ASIC的電源.器件的控制器是基于峰值電流架構,從而保證了快的負載瞬態響應和很穩定的開關頻率.嵌入的積分器補償由于輸出電壓波紋所引起的DC電壓誤差.故障管理包括非閉鎖輸出過壓保護,過流保護和自動恢復的熱保護.輸出電流高達7A,工作溫度-55 C 到 +125 C,可編開關頻率從100kHz到1MHz.RHRPMPOL01總離子劑量為100 krad,無單粒子閂鎖效應高達70 MeV/mg/cm2 (@ VCC up to 7 V),SEU-SEFI特性高達VCC 7V,無質子.主要用在空間應用的點負載穩壓器,FPGA,DSP,CPU和ASIC電源以及低壓高密度分布電源系統.本文介紹了RHRPMPOL01主要特性,框圖,典型應用電路圖及其
外用元件表.以及評估板EVAL-RHRPMPOL01主要特性,電路圖,材料清單和PCB設計圖.
The RHRPMPOL01 is a single phase, step-down monolithic switching regulator with
high precision internal voltage reference and integrated power MOSFETs forsynchronous conversion. The device has been developed using SOI technology thatoffers good performance against SEL effect.
The regulator converts 3.0 V to 12 V input voltage to 0.8 V to (0.85xVIN) outputvoltage. It has been designed to supply FPGA, DSP, MCU and ASICS in general forspace applications.
The controller is based on peak current mode architecture, which ensures a fast load
transient response and very stable switching frequency. An embedded integratorcompensates the DC voltage error due to the output voltage ripple. The faultmanagement consists of not-latched output overvoltage protection, overcurrentprotection and auto recovery thermal protection.
RHRPMPOL01主要特性:
• 3.0 V to 12 V input operating voltage range (target radiation performanceguaranteed at VCC up to 7 V)
• 0.8 V to (0.85xVIN) output voltage range
• Up to 7 A output current
• Wide operating temperature range -55 C to +125 C
• Single supply
• Integrated N-channel MOSFETs for synchronous step-down conversion
• Integrated BOOT diode
• Programmable switching frequency: from 100 kHz to 1 MHz
• Fast load transient response and simple loop compensation based on peakcurrent mode control loop
• Easy synchronization with 180 out-of-phase (up to 2 ICs) management
• Current sharing configuration for higher load requirements
• Lossless current sensing based on sense-FET
• Not-latched output overvoltage protection
• Adjustable output overcurrent protection
• Input undervoltage protection
• Latched overtemperature protection
• Power Good output pin
• Programmable soft-start with increased current capability
• Hermetic ceramic package qualified for space applications FLAT-28
• Target radiation performance:
– Total ionizing dose: 100 krad
– Tested ELDRS-free
– SEL-free up to 70 MeV/mg/cm2 (@ VCC up to 7 V)
– SEU-SEFI characterized up to VCC 7 V
– Proton free
– No performance degradation due to SET
– QMLV qualification ongoing
RHRPMPOL01應用:
• Point of load regulation for space application
• FPGA, DSP, CPU and ASICS supply
• Low voltage, high density distributed power systems

圖1.RHRPMPOL01框圖

圖2.RHRPMPOL01典型應用電路圖
圖2應用電路圖中的外用元件表:



評估板EVAL-RHRPMPOL01
EVAL-RHRPMPOL01 evaluation board of radiation hardened 7 A monolithicsynchronous switching regulatorThis user manual provides an overview of the use of the EVAL-RHRPMPOL01 evaluation board. It has been developed andoptimized for a typical application of the RHRPMPOL01 device, a single phase, step-down monolithic switching regulator withhigh precision internal voltage reference and integrated power MOSFETs for synchronous conversion. The regulatorRHRPMPOL01 converts 3 V - 12 V input voltage to 0.8 V - (0.85xVIN) output voltage. The controller is based on a peak current
mode architecture, which ensures a fast load transient response and very stable switching frequency. An embedded integratorcompensates the DC voltage error due to the output voltage ripple.
評估板EVAL-RHRPMPOL01主要特性:
• Input operating voltage: 5.0 V
• Output voltage: 1.2 V
• Output current: up to 5 A
• Enable input voltage: 2.5 V
• Switching frequency: 500 kHz
• Output overcurrent protection: 10 A
• Easy synchronization with 180 out-of-phase (up to 2 ICs) management

圖3.評估板EVAL-RHRPMPOL01外形圖

圖4.評估板EVAL-RHRPMPOL01電路圖
評估板EVAL-RHRPMPOL01材料清單:



圖5.評估板EVAL-RHRPMPOL01 PCB設計圖:頂層裝配

圖6.評估板EVAL-RHRPMPOL01 PCB設計圖:頂層

圖7.評估板EVAL-RHRPMPOL01 PCB設計圖:中間層1

圖8.評估板EVAL-RHRPMPOL01 PCB設計圖:中間層2

圖9.評估板EVAL-RHRPMPOL01 PCB設計圖:底層 |